Cristi Spulbar
Executive Director of CEBAFI
University of Craiova
Romania
Biography
Dr. Cristi Spulbar is the Executive Director of the Banking and Financial Research Center (CEBAFI) at the University of Craiova, Romania, and a Professor and Habilitated Doctor on the Faculty of Economics and Business Administration at the University of Craiova. Moreover, Dr. Cristi Spulbar was appointed Regional Director for Romania by Eurasian Doctoral Summer Academy (EDSA), Bulgaria (Varna). In addition, he is the Scientific Director of both the International Journal of Business Quantitative Economics and Applied Management Research (IJBEMR) and the International Journal of Core Engineering and Management (iJCEM), India. Dr. Spulbar has published more than 200 research papers in journals and conferences and has authored/co-authored more than 20 books. He became a Doctor of Economics in 1999 at the University of Craiova, with a Ph.D. thesis titled, “Optimization of Banking Management in Terms of Market Economy.†His habilitation thesis, "Research on Efficiency of Banking Systems and Monetary Policy," was published in 2016, and he became a member of the University of Craiova’s Doctoral School of Economics, where he has supervised the awarding of Ph.D. degrees in the financial field. His current research interests include banking management, quantitative finance, financial markets, economics, international monetary economy, money and credit, and corporate finance. Building his academic profile since 1995, he has also gained broad experience as a practical practitioner in the financial field. Through continuous training and study, he has achieved a benchmark level of additional professional qualifications, enabling him to serve as an investment consultant, economic and financial evaluator, securities agent, and commercial agent (including being a broker and dealer).
Research Interest
banking management, quantitative finance, financial markets, economics, international monetary economy, money and credit, and corporate finance.
Biography
Dr. Osman Adiguzel graduated from Department of Physics, Ankara University, Turkey in 1974 and received PhD- degree from Dicle University, Diyarbakir-Turkey. He studied at Surrey University, Guildford, UK, as a post doctoral research scientist in 1986-1987, and his studies focused on shape memory alloys. He worked as research assistant, 1975-80, at Dicle University and shifted to Firat University in 1980. He became professor in 1996, and he has already been working as professor. He published over 50 papers in international and national journals; He joined over 100 conferences and symposia in international and national level as participant, invited speaker or keynote speaker with contributions. He served the program chair or conference chair/co-chair in some of these activities. In particular, he joined in last four years (2014 - 2018) over 50 conferences as Speaker, Keynote Speaker and Conference Co-Chair organized by South Asian Institute of Science and Engineering (SAISE), web: http://saise.org/, Science and Engineering Institute (SCIEI), web: http://www.sciei.org, International Association of Computer Science and Information Technology, web: http://www.iacsit.org/, The Academic World Education and Research Center (AWER-Center), web: http://www.awer-center.org/, and other institutes and companies. Dr. Adiguzel served his directorate of Graduate School of Natural and Applied Sciences, Firat University in 1999-2004. He supervised 5 PhD- theses and 3 M.Sc theses. He is also Technical committee member of many conferences. He received a certificate which is being awarded to him and his experimental group in recognition of significant contribution of 2 patterns to the Powder Diffraction File – Release 2000. The ICDD (International Centre for Diffraction Data) also appreciates cooperation of his group and interest in Powder Diffraction File.
Research Interest
Scientific fields of Dr. Adiguzel are as follow: Shape memory effect and displacive phase transformations in shape memory alloys and other alloys, molecular dynamics simulations, alloy modeling, electron microscopy, x-ray diffraction and crystallography.
Biography
Dr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge (ESD) for “Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.†He received his B.S. in Engineering Science from University of Buffalo (1979); a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT); a second degree EE Degree (Engineer Degree) from MIT; a MS Engineering Physics (1986) and a Ph.D in electrical engineering (EE) (1991) from University of Vermont under IBM's Resident Study Fellow program. In 2018, Dr. Voldman served as an International Visiting Scholar at Khon Kaen University in Khon Kaen, Thailand. Dr. Voldman is a contributor to the book Nanoelectronics: Nanowires, Molecular Electronics, and Nano-devices. Dr. Voldman’s latest book is released in 2018, titled From Invention and Patent. Dr. Voldman is an author of the first book series on ESD, EOS and latchup (ten books): ESD: Physics and Devices, ESD: Circuits and Devices, 2nd Edition of ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, Latchup, ESD: Failure Mechanisms and Models, ESD Design and Synthesis, ESD Basics: From Semiconductor Manufacturing to Product Use, and Electrical Overstress (EOS): Devices, Circuits and Systems, ESD: Analog Circuits and Design, ESD Testing: From Component to Systems, as well as a contributor to the book Silicon Germanium: Technology, Modeling and Design and In addition, the International Chinese editions of book ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, and ESD Design and Synthesis (2014). Voldman was a member of the semiconductor development of IBM, Qimonda, Intersil, Taiwan Semiconductor Manufacturing Corporation (TSMC), Samsung Electronics Corporation, and Silicon Space Technology / VORAGO Corporation. His research and development includes soft error rate (SER), cosmic rays, gate induced drain leakage mechanisms, DRAM leakage, latchup, ESD and EOS. He initiated a university lecture program which was established to bring lectures and interaction to university faculty and students internationally; the program has reached over 45 universities in the Thailand, Malaysia, Singapore, United States, Korea, Taiwan, Philippines, India, Senegal, Swaziland, and China. Dr. Voldman has teaches short courses and tutorials on ESD, latchup, patenting, and invention. Dr. Voldman was responsible for initiating the ESD Student Chapter charter, and worked with UESTC in establishment of the first ESD Association student chapter. He is a recipient of 262 issued US patents and has written over 150 technical papers in the area of ESD and CMOS latchup. Since 2007, he has served as an expert witness in patent litigation; and has also founded a limited liability corporation (LLC) consulting business supporting patents, patent writing and patent litigation. In his LLC, S. Voldman served as an expert witness for cases on DRAM development, semiconductor development, integrated circuits, software, and electrostatic discharge. He is presently writing patents for law firms and technology corporations. Steven Voldman provides tutorials and lectures on inventions, innovations, and patents in Malaysia, Sri Lanka and the United States.
Research Interest
DRAM development, semiconductor development electrostatic discharge (ESD) for,Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.
