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Steven H Voldman

Steven H Voldman

Director
Steven H Voldman LLC
USA

Biography

Dr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge (ESD) for “Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.” He received his B.S. in Engineering Science from University of Buffalo (1979); a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT); a second degree EE Degree (Engineer Degree) from MIT; a MS Engineering Physics (1986) and a Ph.D in electrical engineering (EE) (1991) from University of Vermont under IBM's Resident Study Fellow program. In 2018, Dr. Voldman served as an International Visiting Scholar at Khon Kaen University in Khon Kaen, Thailand. Dr. Voldman is a contributor to the book Nanoelectronics: Nanowires, Molecular Electronics, and Nano-devices. Dr. Voldman’s latest book is released in 2018, titled From Invention and Patent. Dr. Voldman is an author of the first book series on ESD, EOS and latchup (ten books): ESD: Physics and Devices, ESD: Circuits and Devices, 2nd Edition of ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, Latchup, ESD: Failure Mechanisms and Models, ESD Design and Synthesis, ESD Basics: From Semiconductor Manufacturing to Product Use, and Electrical Overstress (EOS): Devices, Circuits and Systems, ESD: Analog Circuits and Design, ESD Testing: From Component to Systems, as well as a contributor to the book Silicon Germanium: Technology, Modeling and Design and In addition, the International Chinese editions of book ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, and ESD Design and Synthesis (2014). Voldman was a member of the semiconductor development of IBM, Qimonda, Intersil, Taiwan Semiconductor Manufacturing Corporation (TSMC), Samsung Electronics Corporation, and Silicon Space Technology / VORAGO Corporation. His research and development includes soft error rate (SER), cosmic rays, gate induced drain leakage mechanisms, DRAM leakage, latchup, ESD and EOS. He initiated a university lecture program which was established to bring lectures and interaction to university faculty and students internationally; the program has reached over 45 universities in the Thailand, Malaysia, Singapore, United States, Korea, Taiwan, Philippines, India, Senegal, Swaziland, and China. Dr. Voldman has teaches short courses and tutorials on ESD, latchup, patenting, and invention. Dr. Voldman was responsible for initiating the ESD Student Chapter charter, and worked with UESTC in establishment of the first ESD Association student chapter. He is a recipient of 262 issued US patents and has written over 150 technical papers in the area of ESD and CMOS latchup. Since 2007, he has served as an expert witness in patent litigation; and has also founded a limited liability corporation (LLC) consulting business supporting patents, patent writing and patent litigation. In his LLC, S. Voldman served as an expert witness for cases on DRAM development, semiconductor development, integrated circuits, software, and electrostatic discharge. He is presently writing patents for law firms and technology corporations. Steven Voldman provides tutorials and lectures on inventions, innovations, and patents in Malaysia, Sri Lanka and the United States.

Research Interest

DRAM development, semiconductor development electrostatic discharge (ESD) for,Contributions in ESD protection in CMOS, Silicon On Insulator and Silicon Germanium Technology.